HVPE GaN substrates: growth and characterization
2010 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 7, no 7-8, 1756-1759 p.Article in journal (Refereed) Published
GaN substrates with low dislocation densities were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self-separation method was seen as advantageous, in comparison with the laser-induced lift-off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Place, publisher, year, edition, pages
2010. Vol. 7, no 7-8, 1756-1759 p.
GaN, VPE, structure, XRD, TEM, photoluminescence, Raman spectra
Other Materials Engineering
IdentifiersURN: urn:nbn:se:liu:diva-118748DOI: 10.1002/pssc.200983451ISI: 000301587600004OAI: oai:DiVA.org:liu-118748DiVA: diva2:816621