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HVPE GaN substrates: growth and characterization
Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany; Central Laboratory of Solar Energy and New Energy Sources at the Bulgarian Academy of Sciences, Blvd. Tzarigradsko shose 72, 1784 Sofia, Bulgaria.
Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
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2010 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 7, no 7-8, 1756-1759 p.Article in journal (Refereed) Published
Abstract [en]

GaN substrates with low dislocation densities were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self-separation method was seen as advantageous, in comparison with the laser-induced lift-off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Place, publisher, year, edition, pages
2010. Vol. 7, no 7-8, 1756-1759 p.
Keyword [en]
GaN, VPE, structure, XRD, TEM, photoluminescence, Raman spectra
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:liu:diva-118748DOI: 10.1002/pssc.200983451ISI: 000301587600004OAI: oai:DiVA.org:liu-118748DiVA: diva2:816621
Available from: 2015-06-03 Created: 2015-06-03 Last updated: 2015-10-21

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