InN quantum dots on GaN nanowires grown by MOVPE
2014 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 11, no 3-4, 421-424 p.Article in journal (Refereed) Published
In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Place, publisher, year, edition, pages
2014. Vol. 11, no 3-4, 421-424 p.
quantum dots, nanowires, nitride, MOVPE
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-118755DOI: 10.1002/pssc.201300551OAI: oai:DiVA.org:liu-118755DiVA: diva2:816631