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High rate InN growth by two-step precursor generation hydride vapor phase epitaxy
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
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2015 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 422, 15-19 p.Article in journal (Refereed) Published
Abstract [en]

The increase of InN growth rate by a newly developed two-step precursor generation hydride vapor phase epitaxy (HVPE) was investigated for the preparation of freestanding InN and InGaN substrates. An elevated growth rate was achieved by the complete conversion of InCl generated in the first source zone to InCl3 in the second source zone, by the supply of additional Cl2. The growth rate reached 12.4 μm/h at a growth temperature of 600 °C, and the rate was observed to decrease above this temperature. Specular InN layers grown at 650 °C exhibited a sharp room temperature photoluminescence peak at 0.73 eV with a bulk electron concentration of 1.2×1018 cm−3.

Place, publisher, year, edition, pages
Elsevier, 2015. Vol. 422, 15-19 p.
Keyword [en]
A1. Characterization, A3. Hydride vapor phase epitaxy, B1. Nitrides, B2. Semiconducting indium compounds
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-118756DOI: 10.1016/j.jcrysgro.2015.04.019ISI: 000355018600003OAI: oai:DiVA.org:liu-118756DiVA: diva2:816632
Available from: 2015-06-03 Created: 2015-06-03 Last updated: 2015-06-18

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Publisher's full texthttp://www.sciencedirect.com/science/article/pii/S002202481500305X

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Monemar, Bo
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Semiconductor MaterialsFaculty of Science & Engineering
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