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Challenges of Graphene Growth on Silicon Carbide
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, Faculty of Science & Engineering.
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2013 (English)In: ECS Transactions, Vol. 53, no 1, 9-16 p.Article in journal (Refereed) Published
Abstract [en]

One of the main challenges in the fabrication of device quality graphene is the achievement of large area monolayer graphene that is processing compatible. Here, the impact of the substrate properties on the thickness uniformity and electronic characteristics for epitaxial graphene on SiC produced by high temperature sublimation has been evidenced and discussed. Several powerful techniques have been used to collect data, among them large scale ellipsometry mapping has been demonstrated for the first time. The study is covering all three SiC polytype, e.g. 4H-, 6H- and 3C-SiC in order to reveal eventual peculiarities that have to be controlled during graphene growth. The advantage of the cubic polytype is unambiguously demonstrated.

Place, publisher, year, edition, pages
2013. Vol. 53, no 1, 9-16 p.
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Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-118762DOI: 10.1149/05301.0009ecstOAI: oai:DiVA.org:liu-118762DiVA: diva2:816645
Available from: 2015-06-03 Created: 2015-06-03 Last updated: 2015-06-18

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Yakimova, RositsaYazdi, GholamrezaIakimov, TihomirEriksson, JensDarakchieva, Vanya
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Semiconductor MaterialsFaculty of Science & EngineeringApplied Sensor Science
Condensed Matter Physics

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