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Polarization doping of graphene on silicon carbide
Technical University of Chemnitz, Germany.
University of Erlangen Nurnberg, Germany.
Technical University of Chemnitz, Germany.
Technical University of Chemnitz, Germany.
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2014 (English)In: 2D MATERIALS, ISSN 2053-1583, Vol. 1, no 3, 035003- p.Article in journal (Refereed) Published
Abstract [en]

The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by (i) the spontaneous polarization of the substrate, and (ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC (Ristein et al 2012 Phys. Rev. Lett. 108 246104).

Place, publisher, year, edition, pages
IOP Publishing: Hybrid Open Access , 2014. Vol. 1, no 3, 035003- p.
Keyword [en]
graphene; silicon carbide; polytype; doping; XPS; ARPES
National Category
Chemical Sciences
URN: urn:nbn:se:liu:diva-119276DOI: 10.1088/2053-1583/1/3/035003ISI: 000354986900010OAI: diva2:820530

Funding Agencies|European Union [604391]; DFG within the Collaborative Research Centre [SFB 953]; DFG [SPP 1459, SE 1087/10-1]; European Science Foundation under the EUROCORES Programme EuroGraphene [SE 1087/9-1]

Available from: 2015-06-12 Created: 2015-06-12 Last updated: 2015-06-12

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Vasiliauskas, RemigijusYakimova, Rositsa
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