Thermal stability of beta-Ga2O3 in mixed flows of H-2 and N-2
2015 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 54, no 4, 041102- p.Article in journal (Refereed) Published
The thermal stability of beta-Ga2O3(010) substrates was investigated at atmospheric pressure between 250 and 1450 degrees C in a flow of either N-2 or a mixture of H-2 and N-2 using a radio-frequency induction furnace. The beta-Ga2O3 surface was found to decompose at and above 1150 degrees C in N-2, while the decomposition of beta-Ga2O3 began at only 350 degrees C in the presence of H-2. Heating beta-Ga2O3 substrates in gas flows containing different molar fractions of H-2 demonstrated that the decomposition was promoted by increasing the H-2 molar fractions. Thermodynamic analysis showed that the dominant reactions are Ga2O3(s) = Ga2O(g) + O-2(g) in N-2 and Ga2O3(s) + 2H(2)(g) = Ga2O(g) = 2H(2)O(g) in a mixed flow of H-2 and N-2. The second-order reaction with respect to H-2 determined for the mixed flows agrees with the experimental results for the dependence of the beta-Ga2O3 decomposition rates on the H-2 molar fraction.
Place, publisher, year, edition, pages
Japan Society of Applied Physics , 2015. Vol. 54, no 4, 041102- p.
IdentifiersURN: urn:nbn:se:liu:diva-119263DOI: 10.7567/JJAP.54.041102ISI: 000354743200010OAI: oai:DiVA.org:liu-119263DiVA: diva2:820646