Effects of aluminum on epitaxial graphene grown on C-face SiC
2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 19, 195306- p.Article in journal (Refereed) Published
The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2015. Vol. 117, no 19, 195306- p.
Chemical Sciences Physical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-119250DOI: 10.1063/1.4921462ISI: 000355005600036OAI: oai:DiVA.org:liu-119250DiVA: diva2:820824
Funding Agencies|Swedish Research Council [621-2011-4252]; Linnaeus Grant2015-06-122015-06-122016-08-31