Magnetoresistance of doped silicon
2015 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 91, no 21, 214414- p.Article in journal (Refereed) Published
We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-nonmetal transition. The results are compared to those from a many-body theory where the donor electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.
Place, publisher, year, edition, pages
American Physical Society , 2015. Vol. 91, no 21, 214414- p.
IdentifiersURN: urn:nbn:se:liu:diva-119788DOI: 10.1103/PhysRevB.91.214414ISI: 000355825000002OAI: oai:DiVA.org:liu-119788DiVA: diva2:827274
Funding Agencies|National Research Council of Scientific and Technological Development (CNPq); Bahia Research Foundation (FAPESB)/PRONEX; Sao Paulo Research Foundation (FAPESP)2015-06-262015-06-262015-06-30