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Quantitative Study on the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm diameter 3C-SiC
Crystal Growth Lab, University of Erlangen.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Crystal Growth Lab, University of Erlangen.
2015 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 821, 77-80 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the growth of 3C-SiC using sublimation growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasi-equilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Finally the application to large area growth in a physical vapor transport growth reactor is briefly addressed.

Place, publisher, year, edition, pages
2015. Vol. 821, 77-80 p.
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URN: urn:nbn:se:liu:diva-119985DOI: 10.4028/www.scientific.net/MSF.821-823.77OAI: oai:DiVA.org:liu-119985DiVA: diva2:838883
Available from: 2015-07-01 Created: 2015-07-01 Last updated: 2015-08-18

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Jokubavicius, ValdasSyväjärvi, Mikael
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