In-grown stacking-faults in 4H-SiC epilayers grown on 2 degrees off-cut substrates
2015 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 252, no 6, 1319-1324 p.Article in journal (Refereed) Published
4H-SiC epilayers were grown on 2 degrees off-cut substrates using standard silane/propane chemistry, with the aim of characterizing in-grown stacking faults. The stacking faults were analyzed with low temperature photoluminescence spectroscopy, room temperature photoluminescence mappings, room temperature cathodoluminescence and synchrotron white beam X-ray topography. At least three different types of in-grown stacking faults were observed, including double Shockley stacking faults, triple Shockley stacking faults and bar-shaped stacking faults. Those stacking faults are all previously found in 4 degrees and 8 degrees off-cut epilayers; however, the geometrical size is larger in epilayers grown on 2 degrees off-cut substrates due to lower off-cut angle. The stacking faults were formed close to the epilayer/substrate interface during the epitaxial growth. (C) 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim
Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2015. Vol. 252, no 6, 1319-1324 p.
chemical vapor deposition; epitaxy; photoluminescence; SiC; stacking faults
IdentifiersURN: urn:nbn:se:liu:diva-120065DOI: 10.1002/pssb.201451710ISI: 000355756200018OAI: oai:DiVA.org:liu-120065DiVA: diva2:839945
Funding Agencies|Swedish Research Council (VR); Advanced Functional Materials (AFM); Swedish Foundation for Strategic Research (SSF)2015-07-062015-07-062015-07-06