The calculation of InGaN quantum dot formation mechanism on GaN pyramid
2015 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 84, 72-79 p.Article in journal (Refereed) Published
An equilibrium approach is used to calculate the free energy and composition distribution of InGaN/GaN quantum dot located on the InGaN/GaN pyramid. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. The results can fit our experiment qualitatively.
Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 84, 72-79 p.
InGaN quantum dots; GaN pyramid; Critical diameter
IdentifiersURN: urn:nbn:se:liu:diva-120267DOI: 10.1016/j.spmi.2015.03.067ISI: 000357227900008OAI: oai:DiVA.org:liu-120267DiVA: diva2:843042
Funding Agencies|National Natural Science Foundation of China [61275201, 61372037]; Program for New Century Excellent Talents in University of Ministry of Education of China [NCET-10-0261]; Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), P.R. China; Fundamental Research Funds for the Central Universities of Ministry of Education of China [2011RC0402]; Research Fund for the Doctoral Program of Higher Education of China ; Opened Fund of the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences2015-07-242015-07-242015-07-24