liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
The calculation of InGaN quantum dot formation mechanism on GaN pyramid
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering. Beijing University of Posts and Telecommun, Peoples R China; China International Telecommunication Construction Group Design Institute Co., Ltd, Beijing, Peoples R China.
Beijing University of Posts and Telecommun, Peoples R China.
Beijing University of Posts and Telecommun, Peoples R China.
Beijing University of Posts and Telecommun, Peoples R China.
Show others and affiliations
2015 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 84, 72-79 p.Article in journal (Refereed) Published
Abstract [en]

An equilibrium approach is used to calculate the free energy and composition distribution of InGaN/GaN quantum dot located on the InGaN/GaN pyramid. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. The results can fit our experiment qualitatively.

Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 84, 72-79 p.
Keyword [en]
InGaN quantum dots; GaN pyramid; Critical diameter
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-120267DOI: 10.1016/j.spmi.2015.03.067ISI: 000357227900008OAI: oai:DiVA.org:liu-120267DiVA: diva2:843042
Note

Funding Agencies|National Natural Science Foundation of China [61275201, 61372037]; Program for New Century Excellent Talents in University of Ministry of Education of China [NCET-10-0261]; Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), P.R. China; Fundamental Research Funds for the Central Universities of Ministry of Education of China [2011RC0402]; Research Fund for the Doctoral Program of Higher Education of China [20100005110013]; Opened Fund of the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences

Available from: 2015-07-24 Created: 2015-07-24 Last updated: 2015-07-24

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Holtz, Per-Olof
By organisation
Department of Physics, Chemistry and BiologyFaculty of Science & EngineeringSemiconductor Materials
In the same journal
Superlattices and Microstructures
Chemical Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 62 hits
ReferencesLink to record
Permanent link

Direct link