liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Atomic Layer Deposition of Al2O3 on NF3-pre-treated graphene
Technical University of Dresden, Germany.
Technical University of Dresden, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Show others and affiliations
2015 (English)In: NANOTECHNOLOGY VII, Society of Photo-optical Instrumentation Engineers (SPIE) , 2015, Vol. 9519, no 951915Conference paper, Published paper (Refereed)
Abstract [en]

Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphenes lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF3 instead of XeF2 on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al2O3. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF3 in the same reactor immediately before applying 30 (TMA-H2O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1Hz. The total amount of Al2O3 material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al2O3 morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and RAMAN Spectroscopy before and after the coating procedure, respectively.

Place, publisher, year, edition, pages
Society of Photo-optical Instrumentation Engineers (SPIE) , 2015. Vol. 9519, no 951915
Series
Proceedings of SPIE, ISSN 0277-786X
Keyword [en]
Atomic Layer Deposition (ALD); Aluminium(III) oxide (Al2O3); graphene; in-vacuo pre-treatment; Nitrogen trifluoride (NF3); in-situ real-time Spectroscopic Ellipsometry (irtSE); in-vacuo X-ray Photoelectron Spectroscopy (XPS); Atomic Force Microscopy (AFM)
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-120482DOI: 10.1117/12.2181242ISI: 000357932000016ISBN: 978-1-62841-642-8 (print)OAI: oai:DiVA.org:liu-120482DiVA: diva2:845402
Conference
Conference on Nanotechnology VII
Available from: 2015-08-11 Created: 2015-08-11 Last updated: 2015-08-11

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Yakimova, RositsaDarakchieva, Vanya
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
Chemical Sciences

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 73 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf