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InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage
University of Politecn Madrid, Spain.
University of Politecn Madrid, Spain.
University of Politecn Madrid, Spain.
University of Politecn Madrid, Spain.
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2015 (English)In: NANO ENERGY, ISSN 2211-2855, Vol. 13, 291-297 p.Article in journal (Refereed) Published
Abstract [en]

Light to hydrogen conversion via water splitting is of immense interest as a clean, storable, and InN; renewable energy source (Tachibana et al., 2012 [1]; Maeda and Domen, 2010 [2]; van de Krol et al., Quantum dots; 2008 [3]; van Dorp et al., 2009 [4]; Kudo and Miseki, 2009 [5]) but efficient materials need to be found. Photoelect rode; To solve, InGaN has properties ideally suited and we demonstrate here that epitaxial InN quantum dots Water splitting; Hydrogen generation (QDs) more than double the photoelectrochemical (PEC) water splitting efficiency of an In0.54Ga046N photoelectrode. The InN/In0.54Ga0.46N-QDs-photoelectrode reveals a maximum incident-photon-tocurrent-conversion efficiency (IPCE) of up to 56% at a wavelength of 600 nm with hydrogen generation rate of 133 mot h(-1) cm(-2) at zero voltage under illumination of a 1000W Xenon arc lamp. The bare In0.51Ga0.16N-layer-photoelectrode reveals a much lower IPCE of 24% with hydrogen generation rate of 59 pmol h(-1) cm(-2). (C) 2015 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 13, 291-297 p.
Keyword [en]
InGaN; InN; Quantum dots; Photoelect rode; Water splitting; Hydrogen generation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-120754DOI: 10.1016/j.nanoen.2015.02.017ISI: 000358414700030OAI: oai:DiVA.org:liu-120754DiVA: diva2:848167
Available from: 2015-08-24 Created: 2015-08-24 Last updated: 2015-08-24

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Willander, Magnus
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Physics and ElectronicsFaculty of Science & Engineering
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