InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage
2015 (English)In: NANO ENERGY, ISSN 2211-2855, Vol. 13, 291-297 p.Article in journal (Refereed) Published
Light to hydrogen conversion via water splitting is of immense interest as a clean, storable, and InN; renewable energy source (Tachibana et al., 2012 ; Maeda and Domen, 2010 ; van de Krol et al., Quantum dots; 2008 ; van Dorp et al., 2009 ; Kudo and Miseki, 2009 ) but efficient materials need to be found. Photoelect rode; To solve, InGaN has properties ideally suited and we demonstrate here that epitaxial InN quantum dots Water splitting; Hydrogen generation (QDs) more than double the photoelectrochemical (PEC) water splitting efficiency of an In0.54Ga046N photoelectrode. The InN/In0.54Ga0.46N-QDs-photoelectrode reveals a maximum incident-photon-tocurrent-conversion efficiency (IPCE) of up to 56% at a wavelength of 600 nm with hydrogen generation rate of 133 mot h(-1) cm(-2) at zero voltage under illumination of a 1000W Xenon arc lamp. The bare In0.51Ga0.16N-layer-photoelectrode reveals a much lower IPCE of 24% with hydrogen generation rate of 59 pmol h(-1) cm(-2). (C) 2015 Elsevier Ltd. All rights reserved.
Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 13, 291-297 p.
InGaN; InN; Quantum dots; Photoelect rode; Water splitting; Hydrogen generation
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:liu:diva-120754DOI: 10.1016/j.nanoen.2015.02.017ISI: 000358414700030OAI: oai:DiVA.org:liu-120754DiVA: diva2:848167