Efficient Nitrogen Incorporation in ZnO Nanowires by Unintentional Doping
2015 (English)Conference paper, Abstract (Refereed)
One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity.
Place, publisher, year, edition, pages
2015. 1-8 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-121243OAI: oai:DiVA.org:liu-121243DiVA: diva2:852722
17th International Conference on II-VI Compounds and Related Materials, Paris,France, 2015.