liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
Department of Electrical Engineering and Computer Science, Nagoya University, Chikusa-ku, Nagoya, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Show others and affiliations
2016 (English)In: Physical Review B, ISSN 2469-9950 (print); 2469-9969 (online), Vol. 94, no 4, 045206Article in journal (Refereed) Published
Abstract [en]

Deep levels in Mg doped GaN have been studied using deep level transient spectroscopyand minority charge carrier transient spectroscopy. Two traps are revealed in the investigatedtemperature range. In the substrate, one electron trap labelled ET1 (EC – 0.158 eV) is observedand in the Mg-doped layer, one hole trap labelled HT1 has been revealed. By varying theelectric field, it is found that the hole trap HT1 exhibits an electric field enhanced hole emissionrate. Using four theoretical models based on 3-dimensional Coulombic Poole-Frenkel effect, 3-dimensional square well Poole-Frenkel effect, phonon assisted tunneling, and 1-dimensionalCoulombic Poole-Frenkel effect including phonon assisted tunneling, the experimental data arefitted in order to justify the field enhanced emission process. It is found that the 1-dimensionalCoulombic Poole-Frenkel model including phonon assisted tunneling is consistent with theexperimental data. Since the trap exhibits Poole-Frenkel effect, we suggest it is acceptor like.From the theoretical model, the zero field activation energy of HT1 and an estimate of the holecapture cross section have been determined as Ev+0.57 eV and 1.9x10-15 cm2, respectively.Since the level is only observed in Mg-doped material, it is suggested that the trap can beassociated with a Mg related defect.

Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2016. Vol. 94, no 4, 045206
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-121705DOI: 10.1103/PhysRevB.94.045206ISI: 000381484500007OAI: diva2:858370

Funding agenices: Swedish Research Council [621-2010-3850]; Swedish Energy Agency [38338-1]

Vid tiden för disputation förelåg publikationen endast som manuskript

Available from: 2015-10-02 Created: 2015-10-02 Last updated: 2016-09-26Bibliographically approved
In thesis
1. Electronic properties of intrinsic defects and impurities in GaN
Open this publication in new window or tab >>Electronic properties of intrinsic defects and impurities in GaN
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. The most important application of GaN today is high-brightness blue LEDs, which is used for white LEDs. With the discovery of GaN-based blue LED, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura were awarded the Nobel Prize in 2014. Intrinsic defects and impurities are important in semiconductors since they influence the electronic properties. An impurity is one or several foreign atoms in the host crystal while an intrinsic defect is an imperfection in the host’s crystal lattice. Normally, impurities and intrinsic defects can be introduced either intentionally or unintentionally into semiconductors during the growth process, during processing of the device or from the working environment. Especially for GaN, due to the lack of native substrates, most of the GaN-based device structures are fabricated on foreign substrates such as silicon carbide (SiC) or sapphire (Al2O3). Growth on foreign substrates gives rise to high threading dislocation densities, and they can give rise to electronically active intrinsic defects that influence the performance of the device.

This thesis is focused on electrical characterization of intrinsic defects and impurities in GaN grown by halide vapor phase epitaxy (HVPE) and metalorganic vapor phase epitaxy (MOCVD). In the first part of the thesis, impurities and intrinsic defects in freestanding thick HVPE grown GaN and Mg-doped MOCVD grown GaN is studied. In thick HVPE grown GaN, six electron traps were detected, where two of them were introduced by the polishing process. For three of the traps, the temperature dependence of the electron capture cross section was studied. From their electron capture properties, it was suggested that the traps are  associated with point defects. In Mg-doped MOCVD grown GaN, one hole trap of high concentration was observed. The hole emission rate is enhanced by increasing electric field and by study the emission process in detail by simulation, it is suggested that the emission process is governed by both the Poole-Frenkel effect and phonon-assisted tunneling.

In the second part, intrinsic defects in GaN introduced intentionally by electron irradiation with different fluences have been studied. In electron irradiated HVPE grown GaN, three electron-irradiation-induced electron traps appeared after 2 MeV electron irradiation at a fluence of 1 × 1014 cm2. Due to the annealing behavior, two of the levels were suggested to be related to primary intrinsic defects. In addition, the temperature dependence of the electron capture cross sections for three levels in electron-irradiated GaN was studied. The temperature dependence of one of them showed that the electron capturing is governed by a cascade capturing process, whereas no temperature dependence was observed for the other levels. The thermal stability of electron traps introduced by 2 MeV electron irradiation was studied. Isochronal annealing shows that most of the defects, which has been associated to nitrogen vacancies, annealed out already at 550 K and by using isothermal annealing the activation energy of one of the process was determined. By minority carrier spectroscopy and deep level transient spectroscopy, hole and electron traps in as-grown and 2 MeV ntype electron irradiated GaN were studied. One hole trap was observed in the as-grown material. By electron irradiation, it was observed that the concentration increases. Simultaneously, the concentration of two electron traps increases. Due to the low introduction rate of one of the electron traps, it is suggested that the defect is associated with a primary defect decorating extended structural defects. The high introduction rate of the hole trap suggests that the defect is associated with a primary intrinsic defect or a complex.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2015. 55 p.
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1701
National Category
Physical Sciences
urn:nbn:se:liu:diva-121710 (URN)10.3384/diss.diva-121710 (DOI)978-91-7685-950-6 (print) (ISBN)
Public defence
2015-10-26, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (English)
Available from: 2015-10-02 Created: 2015-10-02 Last updated: 2015-10-07Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Duc Tran, ThienPozina, GaliaMonemar, BoJanzén, ErikHemmingsson, Carl
By organisation
Semiconductor MaterialsThe Institute of TechnologyThin Film PhysicsFaculty of Science & Engineering
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 662 hits
ReferencesLink to record
Permanent link

Direct link