Electronic properties of defects in high-fluence electron irradiated bulk GaN
2016 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 253, no 3, 521-526 p.Article in journal (Refereed) Published
Using deep level transient spectroscopy, deep levels and capture cross sections of defects introduced by high-fluence electron irradiation of thick halide vapour phase epitaxy grown GaN has been studied. After irradiation with 2 MeV electrons to a high-fluence of 5×1016 cm-2, four deep trap levels, labelled T1 (EC – 0.13 eV), T2 (EC – 0.18 eV), T3 (EC – 0.26 eV) T4 and a broad band of peaks consisting of at least two levels could be observed. These defects, except T1 and T3, were annealed out after annealing at 650 K for 2 hours. The capture cross section is found to be temperature independent for T2 and T3, while T1 shows an decresing capture cross section with increasing temperature, suggesting that electron capturing to this deep level is governed by a cascade capturing process.
Place, publisher, year, edition, pages
John Wiley & Sons, 2016. Vol. 253, no 3, 521-526 p.
Deep level, GaN, DLTS, irradiation
IdentifiersURN: urn:nbn:se:liu:diva-121707DOI: 10.1002/pssb.201552521ISI: 000371634800018OAI: oai:DiVA.org:liu-121707DiVA: diva2:858373
Funding agencies: Swedish Research Council (VR); Swedish Energy Agency2015-10-022015-10-022016-04-07Bibliographically approved