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Notes on the plasma resonance peak employed to determine doping in SiC
Nelson Mandela Metropolitan University, South Africa.
Idaho National Lab, ID 83415 USA.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2015 (English)In: Infrared physics & technology, ISSN 1350-4495, E-ISSN 1879-0275, Vol. 72, 95-100 p.Article in journal (Refereed) Published
Abstract [en]

The doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant gamma. (C) 2015 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2015. Vol. 72, 95-100 p.
Keyword [en]
Infrared reflectance; SiC; Plasma resonance; Doping concentration
National Category
Physical Sciences Chemical Sciences
URN: urn:nbn:se:liu:diva-122214DOI: 10.1016/j.infrared.2015.07.007ISI: 000362146700012OAI: diva2:864323

Funding Agencies|National Research Foundation (NRF), South Africa

Available from: 2015-10-26 Created: 2015-10-23 Last updated: 2015-10-26

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