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Low contact resistance in epitaxial graphene devices for quantum metrology
Chalmers, Sweden.
Chalmers, Sweden.
University of New S Wales, Australia.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2015 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 5, no 8, 087134- p.Article in journal (Refereed) Published
Abstract [en]

We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Omega up to 11 k Omega. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (less than 10 Omega) suitable for high precision quantum resistance metrology.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2015. Vol. 5, no 8, 087134- p.
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Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-122071DOI: 10.1063/1.4928653ISI: 000360655900043OAI: oai:DiVA.org:liu-122071DiVA: diva2:885146
Note

Funding Agencies|Graphene Flagship [CNECT-ICT-604391]; Swedish Foundation for Strategic Research (SSF); Linnaeus Centre for Quantum Engineering; Knut and Alice Wallenberg Foundation; Chalmers AoA Nano; Swedish-Korean Basic Research Cooperative Program of the NRF [2014R1A2A1A1 2067266]; EMRP project GraphOhm; EMRP within EURAMET; EMRP within European Union

Available from: 2015-12-18 Created: 2015-10-19 Last updated: 2017-12-01

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Yakimova, Rositsa

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