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GaN heterostructures with diamond and graphene
Hungarian Academic Science, Hungary.
Hungarian Academic Science, Hungary.
University of Crete, Greece; University of Crete, Greece.
University of Crete, Greece.
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2015 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 30, no 11, 114001- p.Article in journal (Refereed) PublishedText
Abstract [en]

The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2015. Vol. 30, no 11, 114001- p.
Keyword [en]
GaN; graphene; diamond; electron microscopy
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-123529DOI: 10.1088/0268-1242/30/11/114001ISI: 000365240800002OAI: oai:DiVA.org:liu-123529DiVA: diva2:886253
Note

Funding Agencies|OTKA project (Hungary) [K 108869]; European Union under the Seventh Framework Program [312483 ESTEEM2]

Available from: 2015-12-22 Created: 2015-12-21 Last updated: 2016-03-11

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The full text will be freely available from 2016-10-15 08:08
Available from 2016-10-15 08:08

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Yakimova, Rositsa
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Semiconductor MaterialsFaculty of Science & Engineering
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