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Initial stages of growth and the influence of temperature during chemical vapor deposition of sp(2)-BN films
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-5768-0244
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2015 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, no 6, 061520- p.Article in journal (Refereed) Published
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Abstract [en]

Knowledge of the structural evolution of thin films, starting by the initial stages of growth, is important to control the quality and properties of the film. The authors present a study on the initial stages of growth and the temperature influence on the structural evolution of sp(2) hybridized boron nitride (BN) thin films during chemical vapor deposition (CVD) with triethyl boron and ammonia as precursors. Nucleation of hexagonal BN (h-BN) occurs at 1200 degrees C on alpha-Al2O3 with an AlN buffer layer (AlN/alpha-Al2O3). At 1500 degrees C, h-BN grows with a layer-by-layer growth mode on AlN/alpha-Al2O3 up to similar to 4 nm after which the film structure changes to rhombohedral BN (r-BN). Then, r-BN growth proceeds with a mixed layer-by-layer and island growth mode. h-BN does not grow on 6H-SiC substrates; instead, r-BN nucleates and grows directly with a mixed layer-by-layer and island growth mode. These differences may be caused by differences in substrate surface temperature due to different thermal conductivities of the substrate materials. These results add to the understanding of the growth process of sp(2)-BN employing CVD. (C) 2015 American Vacuum Society.

Place, publisher, year, edition, pages
A V S AMER INST PHYSICS , 2015. Vol. 33, no 6, 061520- p.
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Chemical Sciences Physical Sciences
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URN: urn:nbn:se:liu:diva-123831DOI: 10.1116/1.4935155ISI: 000365503800054OAI: oai:DiVA.org:liu-123831DiVA: diva2:892865
Note

Funding Agencies|Swedish Research Council (VR) [621-2013-5585]; Carl Tryggers Stiftelse [12:175]; CeNano Program at Linkoping University; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Bolyai Janos research scholarship of Hungarian Academy of Sciences

Available from: 2016-01-11 Created: 2016-01-11 Last updated: 2017-12-01

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Pedersen, HenrikHögberg, HansHenry, Anne

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