Chloride-based SiC growth on a-axis 4H-SiC substrates
2016 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 480, 23-25 p.Article in journal (Refereed) PublishedText
Abstract SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4Â° off-cut 4HâSiC substrates at a growth rate of 5 â 10 ÎŒ m / h using silane (SiH4) and propane (C3H8) or ethylene (C2H4) as precursors. The concentrations of epitaxial defects and dislocations depend to a large extent on the underlying substrate but can also be influenced by the actual epitaxial growth process. Here we will present a study on the properties of the epitaxial layers grown by a Cl-based technique on an a-axis (90Â° off-cut from c-direction) 4HâSiC substrate.
Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 480, 23-25 p.
4H–SiC; a-face; DLTS; Photoluminescence; Raman; Epitaxy
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-123948DOI: 10.1016/j.physb.2015.08.038ISI: 000365600300005OAI: oai:DiVA.org:liu-123948DiVA: diva2:894285
6th South African Conference on Photonic Materials (SACPM 2015), Mabula Game Lodge, South Africa, 4 – 8 May 2015