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Chloride-based SiC growth on a-axis 4H-€“SiC substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2016 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 480, p. 23-25Article in journal (Refereed) Published
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Abstract [en]

Abstract SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H–SiC substrates at a growth rate of 5 – 10 ÎŒ m / h using silane (SiH4) and propane (C3H8) or ethylene (C2H4) as precursors. The concentrations of epitaxial defects and dislocations depend to a large extent on the underlying substrate but can also be influenced by the actual epitaxial growth process. Here we will present a study on the properties of the epitaxial layers grown by a Cl-based technique on an a-axis (90° off-cut from c-direction) 4H–SiC substrate.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 480, p. 23-25
Keywords [en]
4H–SiC; a-face; DLTS; Photoluminescence; Raman; Epitaxy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-123948DOI: 10.1016/j.physb.2015.08.038ISI: 000365600300005OAI: oai:DiVA.org:liu-123948DiVA, id: diva2:894285
Conference
6th South African Conference on Photonic Materials (SACPM 2015), Mabula Game Lodge, South Africa, 4 – 8 May 2015
Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2017-11-30Bibliographically approved

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Booker, Ian D.Farkas, IldikoIvanov, Ivan G.Ul Hassan, JawadJanzén, Erik

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Booker, Ian D.Farkas, IldikoIvanov, Ivan G.Ul Hassan, JawadJanzén, Erik
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