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Shallow donor in natural MoS2
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Korea Research Institute of Standards and Science, Yuseong, Daejeon, Korea; Department of Nano Science, Korea University of Science and Technology, Daejeon, Korea.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2015 (English)In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 9, no 12, 707-710 p.Article in journal (Refereed) Published
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Text
Abstract [en]

Using electron paramagnetic resonance and density functional theory calculations, we show that the shallow donor responsible for the n-type conductivity in natural MoS2 is rhenium (Re) with a typical concentration in the low 1017 cm–3 range and the g -values: g|| = 2.0274 and g = 2.2642. In bulk MoS2, the valley–orbit (VO) splitting and ionization energy of the Re shallow donor are determined to be ∼3 meV and ∼27 meV, respectively. Calculations show that the VO splitting of Re approaches the value in bulk if the number of MoS2 layers is larger than four and increases to 97.9 meV in a monolayer.

Place, publisher, year, edition, pages
2015. Vol. 9, no 12, 707-710 p.
Keyword [en]
MoS2, rhenium, shallow donors, valley−orbit splitting, electron paramagnetic resonance, density functional theory
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-123946DOI: 10.1002/pssr.201510297ISI: 000368499400006OAI: oai:DiVA.org:liu-123946DiVA: diva2:894294
Note

Funding agencies: Linkoping Linnaeus Initiative for Novel Functional Materials (LiLi-NFM); Korea Evaluation Institute of Industrial Technology (KEIT) - Ministry of Trade, Industry and Energy (MOTIE) [10050296]

Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2016-03-11Bibliographically approved

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Citation style
  • apa
  • harvard1
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