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The Role of Chlorine during High Growth Rate Epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
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2015 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, 141-144 p.Article in journal (Refereed) Published
Abstract [en]

The influence of chlorine has been investigated for high growth rates of 4H-SiC epilayers on 4o off-cut substrates. Samples were grown at a growth rate of approximately 50 and 100 μm/h and various Cl/Si ratios. The growth rate, net doping concentration and charge carrier lifetime have been studied as a function of Cl/Si ratio. This study shows some indications that a high Cl concentration in the growth cell leads to less availability of Si during the growth process.

Place, publisher, year, edition, pages
Pfaffikon, Switzerland: Scientific.Net , 2015. Vol. 821-823, 141-144 p.
Keyword [en]
Chemical Vapor Deposition (CVD), Chlorine, Doping, Epitaxy, High Growth Rate
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-123951DOI: 10.4028/www.scientific.net/MSF.821-823.141OAI: oai:DiVA.org:liu-123951DiVA: diva2:894315
Conference
European Conference on Silicon Carbide & Related Materials, Grenoble, France, 21-25 September 2014
Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2016-06-02Bibliographically approved

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