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The eletronic structure of emeraldine doped in situ from HCl in the gas phase as studied by photoelectron spectroscopy
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering.
Department of Chemistry, University of Pennsylvania Philadelphia, USA.
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1991 (English)In: Synthetic metals, ISSN 0379-6779, E-ISSN 1879-3290, Vol. 41, no 1-2, 645-648 p.Article in journal (Refereed) PublishedText
Abstract [en]

The chemical and electronic structure of spin-coated films of polyaniline in the emeraldine state, treated in-situ with HCl in the gas phase, have been studied for the first time by means of X-ray Photoelectron Spectroscopy (XPS) and Ultra-violet Photoelectron Spectroscopy (UPS). Ultra thin films, of about several hundreds of Ångströms thickness, were spin-coated from a solution of chemically prepared emeraldine in NMP, onto substrates of aluminum or silicon. The salt forms were prepared both by (a) “wet” doping in 1M HCl and (b) the in-situ treatment of the films with HCl in the gas phase. With XPS three different types of chlorine have been observed, two ionic and one covalent. With UPS the valence band spectra of the doped and undoped state, are studied.

Place, publisher, year, edition, pages
Elsevier, 1991. Vol. 41, no 1-2, 645-648 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-124045DOI: 10.1016/0379-6779(91)91149-5OAI: oai:DiVA.org:liu-124045DiVA: diva2:895340
Conference
Proceedings of the International Conference on Science and Technology of Synthetic Metals
Available from: 2016-01-18 Created: 2016-01-18 Last updated: 2016-01-27Bibliographically approved

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Salaneck, William R
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Department of Physics, Chemistry and BiologyThe Institute of TechnologyFaculty of Science & Engineering
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