Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors
2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, 997-1000 p.Article in journal (Refereed) Published
Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. Highsensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance was studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016. Vol. 858, 997-1000 p.
Field Effect Transistor, Gas Sensor, Iridium/Tungsten Trioxide, Benzene, 4H-SiC
IdentifiersURN: urn:nbn:se:liu:diva-124153DOI: 10.4028/www.scientific.net/MSF.858.997OAI: oai:DiVA.org:liu-124153DiVA: diva2:895918
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
FunderEU, FP7, Seventh Framework Programme, 604311