The chemical and electronic structure of the interface between aluminum and polythiophene semiconductors
1993 (English)In: Journal of Chemical Physics, ISSN 0021-9606, E-ISSN 1089-7690, Vol. 99, no 1, 664-672 p.Article in journal (Refereed) PublishedText
We have investigated the chemical nature and the electronic structure of the interface between a low work function metal,aluminum, and a conjugated polymersemiconductor, polythiophene. We have studied the initial stages of the interface formation by depositing the metal onto the surface of a polymer film. Charge transfer processes between the metal and the polymer are analyzed using core‐level x‐ray photoelectron spectroscopy (XPS); the evolution upon metallization of the valence electronic levels directly related to the polymerelectronic structure is followed with ultraviolet photoelectron spectroscopy (UPS). With these techniques, we investigate the deposition of aluminum on two polythiophene systems (i) the alkyl‐substituted poly‐3‐octylthiophene and (ii) the α‐sexithiophene oligomer. The experimental data are compared to the results of a recent quantum chemical study on model systems consisting of thiophene oligomers (up to sexithiophene) interacting with a few Al atoms. The interaction of polythiophene with Al atoms is found to modify dramatically the structure of the conjugated backbone, as strong carbon–aluminum bonds are formed in the α positions of the thiophene rings. A large charge transfer takes place from the Al atoms to the polymer chain, and the upper π levels of the polymer are strongly affected. The metallization is contrasted to the doping of conjugated polymers with alkali metals
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 1993. Vol. 99, no 1, 664-672 p.
Condensed Matter Physics Physical Chemistry
IdentifiersURN: urn:nbn:se:liu:diva-124158DOI: 10.1063/1.466217OAI: oai:DiVA.org:liu-124158DiVA: diva2:895983