liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
GLO AB, Sweden.
Lund University, Sweden.
GLO AB, Sweden; Lund University, Sweden.
Show others and affiliations
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 25, 251106- p.Article in journal (Refereed) PublishedText
Abstract [en]

Todays energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increase of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates. (C) 2015 AIP Publishing LLC.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2015. Vol. 107, no 25, 251106- p.
National Category
Physical Sciences Chemical Sciences
URN: urn:nbn:se:liu:diva-125162DOI: 10.1063/1.4938208ISI: 000368442100006OAI: diva2:903397

Funding Agencies|Swedish Research Council (VR); Swedish Energy Agency

Available from: 2016-02-15 Created: 2016-02-15 Last updated: 2016-03-08

Open Access in DiVA

fulltext(1564 kB)87 downloads
File information
File name FULLTEXT01.pdfFile size 1564 kBChecksum SHA-512
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Pozina, GaliaMonemar, Bo
By organisation
Thin Film PhysicsFaculty of Science & EngineeringSemiconductor Materials
In the same journal
Applied Physics Letters
Physical SciencesChemical Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 87 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 197 hits
ReferencesLink to record
Permanent link

Direct link