Low-temperature photoluminescence of 8H-SiC homoepitaxial layer
2016 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, no 2, 020303- p.Article in journal (Refereed) PublishedText
Low-temperature photoluminescence of a nitrogen-doped 8H-SiC epilayer homoepitaxially grown by a chemical vapor deposition method is reported. The polytype and stacking sequence of the epilayers were confirmed by transmission electron microscopy analyses. The identification of emission lines is discussed in terms of the temperature dependence of the luminescence spectra. Luminescence related to the free excitons and the nitrogen-bound excitons is observed, which allows the determination of the excitonic bandgap of the 8H-SiC polytype. In addition, the low binding energies found for the nitrogen-bound excitons imply shallow levels for the nitrogen donors. (C) 2016 The Japan Society of Applied Physics
Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2016. Vol. 55, no 2, 020303- p.
IdentifiersURN: urn:nbn:se:liu:diva-125306DOI: 10.7567/JJAP.55.020303ISI: 000369005300003OAI: oai:DiVA.org:liu-125306DiVA: diva2:906372