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Peak amplitude of target current determines deposition rate loss during high power pulsed magnetron sputtering
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-4898-5115
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2837-3656
2016 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 124Article in journal (Refereed) PublishedText
Abstract [en]

Film growth rates during DCMS and HIPIMS sputtering in Ar are measured for ten technologically relevant elemental target materials: Al, Si, Ti, Cr, Y, Zr, Nb, Hf, Ta, and W, spanning wide range of masses, ionization energies, and sputter yields. Surprisingly, the ratio of power-normalized HIPIMS and DCMS rates a decays exponentially with increasing peak target current density J(T)(max) for all metals. The effect of J(T)(max) on alpha is dramatic: alpha approximate to 1 in the limit of lowest J(T)(max) values tested (0.04 A/cm(2)) and decreases to only 0.12 with J(T)(max) similar to 3 A/cm(2). With the exception of Al and Si, alpha(J(T)(max)) curves overlap indicating that the debated rate loss in HIPIMS is to large extent determined by the peak amplitude of the HIPIMS target current for all tested metals. Back attraction of ionized target species is responsible for such large variation in a. (C) 2015 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2016. Vol. 124
Keyword [en]
HIPIMS; Growth rate; Deposition rate; Magnetron sputtering; Ionized PVD
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-125682DOI: 10.1016/j.vacuum.2015.11.004ISI: 000369200400001OAI: oai:DiVA.org:liu-125682DiVA: diva2:908210
Available from: 2016-03-01 Created: 2016-02-29 Last updated: 2016-08-31

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Greczynski, GrzegorzHultman, Lars
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