Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy
2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6, no 21482, 1-7 p.Article in journal (Refereed) PublishedText
Direct measurements of carrier diffusion in GaN nanorods with a designed InGaN/GaN layer-in-a-wire structure by scanning near-field optical microscopy (SNOM) were performed at liquid-helium temperatures of 10 K. Without an applied voltage, intrinsic diffusion lengths of photo-excited carriers were measured as the diameters of the nanorods differ from 50 to 800 nm. The critical diameter of nanorods for carrier diffusion is concluded as 170 nm with a statistical approach. Photoluminescence spectra were acquired for different positions of the SNOM tip on the nanorod, corresponding to the origins of the well-defined luminescence peaks, each being related to recombination-centers. The phenomenon originated from surface oxide by direct comparison of two nanorods with similar diameters in a single map has been observed and investigated.
Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP , 2016. Vol. 6, no 21482, 1-7 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-125803DOI: 10.1038/srep21482ISI: 000370040800001PubMedID: 26876009OAI: oai:DiVA.org:liu-125803DiVA: diva2:910326
Funding Agencies|Knut and Alice Wallenberg Foundation2016-03-082016-03-042016-03-31