Current Status of Gallium Oxide-Based Power Device Technology
2015 (English)In: 2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), IEEE , 2015Conference paper (Refereed)Text
Gallium oxide (Ga2O3) possesses excellent material properties especially for power device applications. It is also attractive from an industrial viewpoint since large -size, high quality wafers can be manufactured by using simple methods. These two features have drawn much attention to Ga2O3 as a new wide bandgap semiconductor following SiC and GaN. In this report, we describe the recent progress in development on fundamental technologies for Ga2O3 devices, covering wafer production from melt -grown bulk single crystals, homoepitaxial thin-film growth by halide vapor phase epitaxy, as well as device processing and characterization of metal -oxide -semiconductor field-effect transistors and Schottky barrier diodes.
Place, publisher, year, edition, pages
IEEE , 2015.
, IEEE Compound Semiconductor Integrated Circuits Symposium, ISSN 2162-7940
IdentifiersURN: urn:nbn:se:liu:diva-126279ISI: 000370960500039ISBN: 978-1-4799-8494-7OAI: oai:DiVA.org:liu-126279DiVA: diva2:913375
IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)