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Current Status of Gallium Oxide-Based Power Device Technology
National Institute Informat and Commun Technology, Japan.
National Institute Informat and Commun Technology, Japan; Tamura Corp, Japan.
National Institute Informat and Commun Technology, Japan.
National Institute Informat and Commun Technology, Japan.
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2015 (English)In: 2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), IEEE , 2015Conference paper, Published paper (Refereed)
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Text
Abstract [en]

Gallium oxide (Ga2O3) possesses excellent material properties especially for power device applications. It is also attractive from an industrial viewpoint since large -size, high quality wafers can be manufactured by using simple methods. These two features have drawn much attention to Ga2O3 as a new wide bandgap semiconductor following SiC and GaN. In this report, we describe the recent progress in development on fundamental technologies for Ga2O3 devices, covering wafer production from melt -grown bulk single crystals, homoepitaxial thin-film growth by halide vapor phase epitaxy, as well as device processing and characterization of metal -oxide -semiconductor field-effect transistors and Schottky barrier diodes.

Place, publisher, year, edition, pages
IEEE , 2015.
Series
IEEE Compound Semiconductor Integrated Circuits Symposium, ISSN 2162-7940
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-126279ISI: 000370960500039ISBN: 978-1-4799-8494-7 (print)OAI: oai:DiVA.org:liu-126279DiVA: diva2:913375
Conference
IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Available from: 2016-03-21 Created: 2016-03-21 Last updated: 2016-03-21

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