Conductivity Modulated On-axis 4H-SiC 10+kV PiN Diodes
2015 (English)In: 2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES and ICS (ISPSD), IEEE , 2015, 269-272 p.Conference paper (Refereed)Text
Degradation-free ultrahigh-voltage (> 10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (V-F = 3.3 V at 100 A/cm(2)) and low differential on-resistance (R-ON = 3.4 m Omega.cm(2)) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 degrees C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (tau(P)) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The tau(P) is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.
Place, publisher, year, edition, pages
IEEE , 2015. 269-272 p.
, Proceedings of the International Symposium on Power Semiconductor Devices & ICs, ISSN 1063-6854
On-axis 4H-SiC; PiN diode; ultrahigh-voltage; lifetime enhancement; V-F; on-resistance; OCVD; breakdown voltage; bipolar degradation-free
IdentifiersURN: urn:nbn:se:liu:diva-126278ISI: 000370717300066ISBN: 978-1-4799-6261-7OAI: oai:DiVA.org:liu-126278DiVA: diva2:913380
27th International Symposium on Power Semiconductor Devices and ICs (ISPSD)