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Modeling of Drain Current Mismatch in OrganicThin-Film Transistors
Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, Faculty of Science & Engineering.
Hiroshima University, Japan.
Max Planck Institute for Solid State Research.
Max Planck Institute for Solid State Research.
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2015 (English)In: IEEE/OSA Journal of Display Technology, ISSN 1551-319X, E-ISSN 1558-9323, Vol. 11, 559-563 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we present a consistent model to analyzethe drain current mismatch of organic thin-film transistors.The model takes charge fluctuations and edge effects into account,to predict the fluctuations of drain currents. A Poisson distributionfor the number of charge carriers is assumed to represent therandom distribution of charge carriers in the channel. The edge effectsdue to geometric variations in fabrication processes are interpretedin terms of the fluctuations of channel length and width. Thesimulation results are corroborated by experimental results takenfrom over 80 organic transistors on a flexible plastic substrate.

Place, publisher, year, edition, pages
2015. Vol. 11, 559-563 p.
Keyword [en]
Current fluctuation, mismatch, modeling, organic thin-film transistors (OTFTs)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-127600DOI: 10.1109/JDT.2015.2419692ISI: 000376179800010OAI: oai:DiVA.org:liu-127600DiVA: diva2:925847
Projects
“ Silicon-Organic Hybrid Autarkic Systems (SiOS)” project
Funder
Swedish Foundation for Strategic Research
Available from: 2016-05-03 Created: 2016-05-03 Last updated: 2017-11-30Bibliographically approved

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Tu, DeyuForchheimer, Robert

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
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Output format
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