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Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n(-)-Ga2O3 drift layers grown by halide vapor phase epitaxy
National Institute Informat and Commun Technology, Japan.
National Institute Informat and Commun Technology, Japan.
National Institute Informat and Commun Technology, Japan; Tamura Corp, Japan.
Tamura Corp, Japan; Tokyo University of Agriculture and Technology, Japan.
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2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 108, no 13, 133503- p.Article in journal (Refereed) PublishedText
Abstract [en]

We investigated the temperature-dependent electrical properties of Pt/Ga2O3 Schottky barrier diodes (SBDs) fabricated on n(-)-Ga2O3 drift layers grown on single-crystal n(+)-Ga2O3 (001) substrates by halide vapor phase epitaxy. In an operating temperature range from 21 degrees C to 200 degrees C, the Pt/Ga2O3 (001) Schottky contact exhibited a zero-bias barrier height of 1.09-1.15 eV with a constant near-unity ideality factor. The current-voltage characteristics of the SBDs were well-modeled by thermionic emission in the forward regime and thermionic field emission in the reverse regime over the entire temperature range. (C) 2016 AIP Publishing LLC.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2016. Vol. 108, no 13, 133503- p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-127567DOI: 10.1063/1.4945267ISI: 000373601400041OAI: oai:DiVA.org:liu-127567DiVA: diva2:926172
Note

Funding Agencies|Council for Science, Technology and Innovation (CSTI); NEDO

Available from: 2016-05-04 Created: 2016-05-03 Last updated: 2016-05-04

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Monemar, Bo
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