Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode
2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6, no 24407Article in journal (Refereed) PublishedText
We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.
Place, publisher, year, edition, pages
Nature Publishing Group, 2016. Vol. 6, no 24407
IdentifiersURN: urn:nbn:se:liu:diva-127745DOI: 10.1038/srep24407ISI: 000374166100001PubMedID: 27080264OAI: oai:DiVA.org:liu-127745DiVA: diva2:927512
Funding Agencies|Research Grant of Pukyong National University [CD20151148]2016-05-122016-05-122016-06-02