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Characterization of a n+3C/n-4H SiC heterojunction diode
ABB Corp Research Centre, Switzerland.
ABB Corp Research Centre, Switzerland.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
National Institute Mat Phys, Romania.
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2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 108, no 14, 143502- p.Article in journal (Refereed) PublishedText
Abstract [en]

We report on the fabrication of n+3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to similar to 7 x 10(17) cm(-3) dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n+3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices. (C) 2016 AIP Publishing LLC.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016. Vol. 108, no 14, 143502- p.
National Category
Chemical Sciences
URN: urn:nbn:se:liu:diva-127776DOI: 10.1063/1.4945332ISI: 000374230700040OAI: diva2:927622
Available from: 2016-05-12 Created: 2016-05-12 Last updated: 2016-05-12

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Farkas, IldikoChih-Wei, Chih-WeiJanzén, Erik
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