AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
2016 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, 05FK02-1-05FK02-4 p., 05FK02Article in journal (Refereed) Published
AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2016. Vol. 55, 05FK02-1-05FK02-4 p., 05FK02
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:liu:diva-128077DOI: 10.7567/JJAP.55.05FK02ISI: 000374697600081OAI: oai:DiVA.org:liu-128077DiVA: diva2:928844
FunderSwedish Foundation for Strategic Research Swedish Research Council