liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
Chalmers, Gothenburg, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-8116-9980
Show others and affiliations
2016 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, 05FK02-1-05FK02-4 p., 05FK02Article in journal (Refereed) Published
Abstract [en]

AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2016. Vol. 55, 05FK02-1-05FK02-4 p., 05FK02
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-128077DOI: 10.7567/JJAP.55.05FK02ISI: 000374697600081OAI: oai:DiVA.org:liu-128077DiVA: diva2:928844
Funder
Swedish Foundation for Strategic Research Swedish Research Council
Available from: 2016-05-16 Created: 2016-05-16 Last updated: 2016-06-10

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Li, XunNilsson, DanielDanielsson, ÖrjanPedersen, HenrikJanzén, ErikForsberg, Urban
By organisation
Semiconductor MaterialsFaculty of Science & EngineeringChemistry
In the same journal
Japanese Journal of Applied Physics
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 95 hits
ReferencesLink to record
Permanent link

Direct link