liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Show others and affiliations
2016 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 448, 51-57 p.Article in journal (Refereed) Published
Abstract [en]

We demonstrate growth of thick SiC layers (100–200 µm) on nominally on-axis hexagonal substrates using sublimation epitaxy in vacuum (10−5 mbar) at temperatures varying from 1700 to 1975 °C with growth rates up to 270 µm/h and 70 µm/h for 6H- and 4H–SiC, respectively. The stability of hexagonal polytypes are related to process growth parameters and temperature profile which can be engineered using different thermal insulation materials and adjustment of the induction coil position with respect to the graphite crucible. We show that there exists a range of growth rates for which single-hexagonal polytype free of foreign polytype inclusions can be maintained. Further on, foreign polytypes like 3C–SiC can be stabilized by moving out of the process window. The applicability of on-axis growth is demonstrated by growing a 200 µm thick homoepitaxial 6H–SiC layer co-doped with nitrogen and boron in a range of 1018 cm−3 at a growth rate of about 270 µm/h. Such layers are of interest as a near UV to visible light converters in a monolithic white light emitting diode concept, where subsequent nitride-stack growth benefits from the on-axis orientation of the SiC layer.

Place, publisher, year, edition, pages
2016. Vol. 448, 51-57 p.
Keyword [en]
Mass transfer;Substrates;Single crystal growth;Semiconducting materials
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-128610DOI: 10.1016/j.jcrysgro.2016.05.017OAI: oai:DiVA.org:liu-128610DiVA: diva2:930699
Available from: 2016-05-25 Created: 2016-05-25 Last updated: 2016-07-06

Open Access in DiVA

The full text will be freely available from 2018-05-13 11:40
Available from 2018-05-13 11:40

Other links

Publisher's full text

Search in DiVA

By author/editor
Jokubavicius, ValdasSun, JianwuLiu, XinyuYazdi, GholamrezaIvanov, Ivan GueorguievYakimova, RositsaSyväjärvi, Mikael
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Journal of Crystal Growth
Materials Chemistry

Search outside of DiVA

GoogleGoogle ScholarTotal: 4 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 59 hits
ReferencesLink to record
Permanent link

Direct link