Photoluminescence enhancement in nano-textured fluorescent SiC passivated by atomic layer deposited Al2O3 films
2016 (English)Conference paper (Refereed)
The influence of thickness of atomic layer deposited Al2O3 films on nanotextured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These result show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.
Place, publisher, year, edition, pages
2016. Vol. 858, 493-496 p.
photoluminescence, fluorescent SiC, passivation, Al2O3, lifetime, ALD.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-128611DOI: 10.4028/www.scientific.net/MSF.858.493OAI: oai:DiVA.org:liu-128611DiVA: diva2:930703
European Conference on Silicon Carbide and Related Materials 2015