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Photoluminescence enhancement in nano-textured fluorescent SiC passivated by atomic layer deposited Al2O3 films
Technical University of Denmark.
Technical University of Denmark.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Technical University of Denmark.
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2016 (English)Conference paper (Refereed)
Abstract [en]

The influence of thickness of atomic layer deposited Al2O3 films on nanotextured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These result show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.

Place, publisher, year, edition, pages
2016. Vol. 858, 493-496 p.
Keyword [en]
photoluminescence, fluorescent SiC, passivation, Al2O3, lifetime, ALD.
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-128611DOI: 10.4028/ diva2:930703
European Conference on Silicon Carbide and Related Materials 2015
Available from: 2016-05-25 Created: 2016-05-25 Last updated: 2016-06-10

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Jokubavicius, ValdasSyväjärvi, Mikael
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Semiconductor MaterialsFaculty of Science & Engineering
Condensed Matter Physics

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