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Hard and elastic epitaxial ZrB2 thin films on Al2O3(0001) substrates deposited by magnetron sputtering from a ZrB2 compound target
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-3277-1945
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
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2016 (English)In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 111, p. 166-172Article in journal (Refereed) Published
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Text
Abstract [en]

Zirconium diboride (ZrB2) exhibits high hardness and high melting point, which is beneficial for applications in for e.g. metal cutting. However, there is limited data on the mechanical properties of ZrB2 films and no data on epitaxial films. In this study, ZrB2(0001) thin films, with thicknesses up to 1.2 μm, have been deposited on Al2O3(0001) substrates by direct current magnetron sputtering from a compound target. X-ray diffraction and transmission electron microscopy show that the films grow epitaxially with two domain types exhibiting different in-plane epitaxial relationships to the substrate. The out-of-plane epitaxial relationship was determined to ZrB2(0001)|Al2O3(0001) and the in-plane relationships of the two domains to ZrB2[100]‖Al2O3[100] and ZrB2[110]‖Al2O3[100]. Mechanical properties of the films, evaluated by nanoindentation, showed that all films exhibit hardness values above 45 GPa, a reduced Young's modulus in the range 350–400 GPa, and a high elastic recovery of 70% at an applied load of 9000 μN.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 111, p. 166-172
Keyword [en]
Borides, Epitaxial growth, Mechanical properties, Nanoindentation, Sputter deposition
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-128612DOI: 10.1016/j.actamat.2016.03.064ISI: 000375812100018OAI: oai:DiVA.org:liu-128612DiVA, id: diva2:930708
Note

Funding agencies: Swedish Research Council (VR) [621-2010-3921]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Knut and Alice Wallenberg Foundation

Available from: 2016-05-25 Created: 2016-05-25 Last updated: 2017-11-30Bibliographically approved
In thesis
1. ZrB2 Thin Films: Growth and Characterization
Open this publication in new window or tab >>ZrB2 Thin Films: Growth and Characterization
2016 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Zirconium diboride, ZrB2, is a ceramic material with bulk properties such as high melting point (3245 °C), high hardness (23 GPa), and low resistivity (~8 μΩcm). Thin film growth of ZrB2 using physical vapor deposition has suffered from problems with films deviating from stoichiometry and with high levels of contaminants, especially high oxygen content. The homogeneity range of ZrB2 is very narrow, and consequently it is vital to achieve the correct stoichiometry to grow films with high crystalline order.

This thesis describes a direct current magnetron sputtering process to grow stoichiometric ZrB2 thin films with a low degree of impurities. Growth of epitaxial ZrB2 films was achieved on 4H-SiC(0001), Si(111) and Al2O3(0001) substrates. The effect of deposition temperature and power applied on the sputtering target was investigated and showed that high power density (8.77 Wcm-2) and high temperature (900 °C) resulted in films with the best composition and the highest crystal quality. ZrB2 films on GaN(0001) templates exhibit an amorphous layer at the film-substrate interface and the resulting films are either polycrystalline or textured.

Resistivity measurements showed that the ZrB2 thin films exhibit typical resistivity values of ~100-250 μΩcm and that the resistivity decreased with increasing deposition temperature.

Nanoindentation was applied to assess the mechanical properties of the films. The epitaxial ZrB2 films exhibit high elastic recovery and a hardness of ~45-50 GPa, twice as high as the literature bulk value. In addition, evaluation of the mechanical properties was performed at high temperatures of up to 600 °C and showed that the epitaxial films retained a higher hardness, compared to textured ZrB2 films and bulk, also at these temperatures.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2016. p. 67
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1744
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-128614 (URN)10.3384/diss.diva-128614 (DOI)978-91-7685-833-2 (ISBN)
Public defence
2016-06-17, Planck, Fysikhuset, Campus Valla, Linköping, 09:15 (English)
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Available from: 2016-05-25 Created: 2016-05-25 Last updated: 2016-08-31Bibliographically approved

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Tengdelius, LinaBroitman, EstebanLu, JunEriksson, FredrikBirch, JensHultman, LarsHögberg, Hans

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