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Boron-implanted 3C-SiC for intermediate band solar cells
University of Oslo.
University of Oslo.
University of Oslo.
SINTEF.
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2016 (English)Conference paper (Refereed)
Abstract [en]

Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then annealed at 1400, 1500 and 1600 °C for 1h at each temperature. The buried boron box-like concentration profile can reach ~2×1021 cm-3 in the plateau region. The optical activity of the incorporated boron atoms was deduced from the evolution in absorption and emission spectra, indicating possible pathway for achieving an intermediate band behavior in boron doped 3C-SiC at sufficiently high dopant concentrations.                    

Place, publisher, year, edition, pages
2016. Vol. 858, 291-294 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-128613DOI: 10.4028/www.scientific.net/MSF.858.291OAI: oai:DiVA.org:liu-128613DiVA: diva2:930730
Conference
International Conference on Silicon Carbide and Related Materials
Available from: 2016-05-25 Created: 2016-05-25 Last updated: 2016-06-10

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Jokubavicius, ValdasLiu, XinyuSun, JianwuSyväjärvi, Mikael
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Semiconductor MaterialsFaculty of Science & Engineering
Condensed Matter Physics

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