Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique
2010 (English)Conference paper (Refereed)Text
We report the results of a low temperature photoluminescence investigation of 3C‐SiC samples grown by chemical vapor deposition on vapor‐liquid‐solid seeds. The main parameters tested in this series of samples were i°) the effects of changing the C/Si ratio and ii°) the growth temperature on the final growth product. On the first series the C/Si ratio varied from 1 to 14 for a constant growth temperature of 1550° C. For the second series, the growth temperature varied from 1450 to 1650° C by steps of 50° C with a constant C/Si ratio equal to 3. According to this work, the best results (minimum incorporation of impurities and best crystal quality) were obtained when using a C/Si ratio of 3 at 1650° C.
Place, publisher, year, edition, pages
2010. Vol. 1292, no 1, 119-122 p.
LTPL, 3C-SiC, CVD, VLS
Other Materials Engineering
IdentifiersURN: urn:nbn:se:liu:diva-128850DOI: 10.1063/1.3518275OAI: oai:DiVA.org:liu-128850DiVA: diva2:932649
AIP Conference Proceedings.8–10 October 2010, Strasbourg, (France)