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Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-€SiC Layers Grown by Chemical Vapor Deposition on 3C-€SiC Seeds grown by the Vapor-€Liquid-Solid Technique
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France .
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France .
Laboratoire des Multimateriaux et Interfaces, UMR‐CNRS 5615, UCB‐Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France .
Laboratoire des Multimateriaux et Interfaces, UMR‐CNRS 5615, UCB‐Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France .
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2010 (English)Conference paper (Refereed)Text
Abstract [en]

We report the results of a low temperature photoluminescence investigation of 3C‐SiC samples grown by chemical vapor deposition on vapor‐liquid‐solid seeds. The main parameters tested in this series of samples were i°) the effects of changing the C/Si ratio and ii°) the growth temperature on the final growth product. On the first series the C/Si ratio varied from 1 to 14 for a constant growth temperature of 1550° C. For the second series, the growth temperature varied from 1450 to 1650° C by steps of 50° C with a constant C/Si ratio equal to 3. According to this work, the best results (minimum incorporation of impurities and best crystal quality) were obtained when using a C/Si ratio of 3 at 1650° C.

Place, publisher, year, edition, pages
2010. Vol. 1292, no 1, 119-122 p.
Keyword [en]
LTPL, 3C-SiC, CVD, VLS
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:liu:diva-128850DOI: 10.1063/1.3518275OAI: oai:DiVA.org:liu-128850DiVA: diva2:932649
Conference
AIP Conference Proceedings.8–10 October 2010, Strasbourg, (France)
Available from: 2016-06-02 Created: 2016-06-02 Last updated: 2016-06-17

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Publisher's full texthttp://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.3518275

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Sun, J. W.
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