Strained Ge FinFET structures fabricated by selective epitaxial growth
2014 (English)In: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, 2014, 19-20 p.Conference paper (Refereed)Text
A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.
Place, publisher, year, edition, pages
2014. 19-20 p.
MOSFET;elemental semiconductors;epitaxial growth;germanium;semiconductor epitaxial layers;Ge;one-growth step fabrication scheme;pre-epi oxide removal;selective epitaxial growth;strained Ge FinFET structures;Epitaxial growth;Optimization;Rough surfaces;Silicon;Silicon germanium;Surface morphology;Surface treatment
Textile, Rubber and Polymeric Materials
IdentifiersURN: urn:nbn:se:liu:diva-128849DOI: 10.1109/ISTDM.2014.6874674OAI: oai:DiVA.org:liu-128849DiVA: diva2:932650
7th International SiGe Technology and Device Meeting - ISTDM. 2-4 June 2014, Singapore