Strained Ge FinFET structures fabricated by selective epitaxial growth 2014 (English)In: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, 2014, p. 19-20Conference paper, Published paper (Refereed)

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Text

Abstract [en]

A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.

Place, publisher, year, edition, pages

2014. p. 19-20

Keywords [en]

MOSFET;elemental semiconductors;epitaxial growth;germanium;semiconductor epitaxial layers;Ge;one-growth step fabrication scheme;pre-epi oxide removal;selective epitaxial growth;strained Ge FinFET structures;Epitaxial growth;Optimization;Rough surfaces;Silicon;Silicon germanium;Surface morphology;Surface treatment

National Category

Textile, Rubber and Polymeric Materials

Identifiers

URN: urn:nbn:se:liu:diva-128849DOI: 10.1109/ISTDM.2014.6874674OAI: oai:DiVA.org:liu-128849DiVA, id: diva2:932650

Conference

7th International SiGe Technology and Device Meeting - ISTDM. 2-4 June 2014, Singapore

Available from: 2016-06-02 Created: 2016-06-02 Last updated: 2021-12-29

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Sun, Jianwu

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