LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
2010 (English)In: Silicon Carbide and Related Materials 2009, 2010, Vol. 645-648, 415-418 p.Conference paper (Refereed)Text
Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy ( 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.
Place, publisher, year, edition, pages
2010. Vol. 645-648, 415-418 p.
, Materials Science Forum, ISSN 1662-9752
Donor-Acceptor Pair, Photoluminescence (PL)
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-128858DOI: 10.4028/www.scientific.net/MSF.645-648.415OAI: oai:DiVA.org:liu-128858DiVA: diva2:932656
HeteroSiC & WASMPE 2011