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LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074-GES, 34095 Montpellier Cedex 5, France.
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074-GES, 34095 Montpellier Cedex 5, France.
Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France.
Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France.
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2010 (English)In: Silicon Carbide and Related Materials 2009, 2010, Vol. 645-648, 415-418 p.Conference paper (Refereed)Text
Abstract [en]

Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy ( 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.

Place, publisher, year, edition, pages
2010. Vol. 645-648, 415-418 p.
Series
, Materials Science Forum, ISSN 1662-9752
Keyword [en]
Donor-Acceptor Pair, Photoluminescence (PL)
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-128858DOI: 10.4028/www.scientific.net/MSF.645-648.415OAI: oai:DiVA.org:liu-128858DiVA: diva2:932656
Conference
HeteroSiC & WASMPE 2011
Available from: 2016-06-02 Created: 2016-06-02 Last updated: 2016-06-17

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