liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Show others and affiliations
2010 (English)In: Silicon Carbide and Related Materials 2009, 2010, Vol. 645, 179-182 p.Conference paper, Published paper (Refereed)
Resource type
Text
Abstract [en]

Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

Place, publisher, year, edition, pages
2010. Vol. 645, 179-182 p.
Series
Materials Science Forum
Keyword [en]
Epitaxial Growth, Low Temperature Photoluminescence
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-128857DOI: 10.4028/www.scientific.net/MSF.645-648.179OAI: oai:DiVA.org:liu-128857DiVA: diva2:932657
Conference
Silicon Carbide and Related Materials 2009
Available from: 2016-06-02 Created: 2016-06-02 Last updated: 2016-06-20

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Sun, Jian WuBeshkova, MilenaVasiliauskas, RemigijusSyväjärvi, MikaelYakimova, Rositsa
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 44 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf