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Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.ORCID iD: 0000-0002-6403-3720
Grenoble, France.
Grenoble, France.
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2011 (English)In: Silicon Carbide and Related Materials 2010, 2011, Vol. 679, p. 169-172Conference paper, Published paper (Refereed)
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Text
Abstract [en]

We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC samples grown with the Continuous-Feed Physical Vapor Transport technique, using a small diameter neck to filter the defects and improve the as-grown material.
Place, publisher, year, edition, pages
2011. Vol. 679, p. 169-172
Series
Materials Science Forum, ISSN 0255-5476
Keywords [en]
3C-SiC, RAMAN, LTPL, Bulk Crystal, CF-PVT
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-128855DOI: 10.4028/www.scientific.net/MSF.679-680.169OAI: oai:DiVA.org:liu-128855DiVA, id: diva2:932660
Conference
Silicon Carbide and Related Materials 2010
Available from: 2016-06-02 Created: 2016-06-02 Last updated: 2021-12-29

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Sun, JianWu

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