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Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
Thessaloniki , Greece.
Thessaloniki , Greece.
Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
Villeurbanne; France.
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2011 (English)In: Silicon Carbide and Related Materials 2010, 2011, Vol. 679, 241-244 p.Conference paper (Refereed)Text
Abstract [en]

The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.

Place, publisher, year, edition, pages
2011. Vol. 679, 241-244 p.
Series
, Materials Science Forum, ISSN 0255-5476
Keyword [en]
3C-SiC, LTPL, Post-Growth Annealing, VLS, TEM, Defect
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-128854DOI: 10.4028/www.scientific.net/MSF.679-680.241OAI: oai:DiVA.org:liu-128854DiVA: diva2:932661
Conference
Silicon Carbide and Related Materials 2010
Available from: 2016-06-02 Created: 2016-06-02 Last updated: 2016-06-20

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Sun, JianWu
Condensed Matter Physics

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