Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
2011 (English)In: Silicon Carbide and Related Materials 2010, 2011, Vol. 679, 241-244 p.Conference paper (Refereed)Text
The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.
Place, publisher, year, edition, pages
2011. Vol. 679, 241-244 p.
, Materials Science Forum, ISSN 0255-5476
3C-SiC, LTPL, Post-Growth Annealing, VLS, TEM, Defect
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-128854DOI: 10.4028/www.scientific.net/MSF.679-680.241OAI: oai:DiVA.org:liu-128854DiVA: diva2:932661
Silicon Carbide and Related Materials 2010