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Epitaxial growth on on-axis substrates
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Silicon Carbide Epitaxy / [ed] Francesco La Via, Kerala, India: Research Signpost, 2012, 97-119 p.Chapter in book (Refereed)
Abstract [en]

SiC epitaxial growth using the Chemical Vapour Deposition (CVD) technique on nominally on-axis substrate is presented. Both standard and chloride-based chemistry have been used with the aim to obtain high quality layers suitable for device fabrication. Both homoepitaxy (4H on 4H) and heteroepitaxy (3C on hexag onal substrate) are addressed.

Place, publisher, year, edition, pages
Kerala, India: Research Signpost, 2012. 97-119 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-128859ISBN: 978-81-308-0500-9 (print)OAI: oai:DiVA.org:liu-128859DiVA: diva2:932671
Available from: 2016-06-02 Created: 2016-06-02 Last updated: 2016-06-21Bibliographically approved

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Epitaxial growth on on-axis substrates(876 kB)72 downloads
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Henry, AnneLeone, StefanoLiu, XianjieUl-Hassan, JawadKordina, OlleBergman, Jonas P.Janzén, Erik

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Henry, AnneLeone, StefanoLiu, XianjieUl-Hassan, JawadKordina, OlleBergman, Jonas P.Janzén, Erik
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Thin Film PhysicsThe Institute of TechnologySemiconductor MaterialsSurface Physics and Chemistry
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