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Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
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2016 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, no 5, 05FA01- p.Article in journal (Refereed) Published
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Abstract [en]

The influence of NH3 input partial pressure on N-polarity InGaN grown by tri-halide vapor phase epitaxy was investigated. It was found that surface morphology, solid composition and optical properties were affected by NH3 input partial pressure. As shown in thermodynamic analyses, the indium content increased due to an increase in the driving force for InN deposition caused by increased NH3 input partial pressure. In addition, the deep level emission around 2.1 eV in photoluminescence measurements drastically decreased at higher NH3 input partial pressures. Ab initio calculations and subsequent secondary ion mass spectrometry measurements suggested the reduction of metal-vacancies and/or carbon impurity incorporation in the InGaN layers. (C) 2016 The Japan Society of Applied Physics

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2016. Vol. 55, no 5, 05FA01- p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-128950DOI: 10.7567/JJAP.55.05FA01ISI: 000374697600002OAI: oai:DiVA.org:liu-128950DiVA: diva2:934895
Conference
6th International Symposium on Growth of III-Nitrides (ISGN)
Available from: 2016-06-09 Created: 2016-06-07 Last updated: 2016-06-09

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