Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy
2016 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, no 5, 05FA01- p.Article in journal (Refereed) PublishedText
The influence of NH3 input partial pressure on N-polarity InGaN grown by tri-halide vapor phase epitaxy was investigated. It was found that surface morphology, solid composition and optical properties were affected by NH3 input partial pressure. As shown in thermodynamic analyses, the indium content increased due to an increase in the driving force for InN deposition caused by increased NH3 input partial pressure. In addition, the deep level emission around 2.1 eV in photoluminescence measurements drastically decreased at higher NH3 input partial pressures. Ab initio calculations and subsequent secondary ion mass spectrometry measurements suggested the reduction of metal-vacancies and/or carbon impurity incorporation in the InGaN layers. (C) 2016 The Japan Society of Applied Physics
Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2016. Vol. 55, no 5, 05FA01- p.
IdentifiersURN: urn:nbn:se:liu:diva-128950DOI: 10.7567/JJAP.55.05FA01ISI: 000374697600002OAI: oai:DiVA.org:liu-128950DiVA: diva2:934895
6th International Symposium on Growth of III-Nitrides (ISGN)