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Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes
Linköping University, Department of Science and Technology. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 16, 165702- p.Article in journal (Refereed) PublishedText
Abstract [en]

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5M exhibit stronger yellow emission (similar to 575 nm) compared to those based on 1:1 and 1:3M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination. Published by AIP Publishing.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2016. Vol. 119, no 16, 165702- p.
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-129174DOI: 10.1063/1.4947593ISI: 000375929900043OAI: oai:DiVA.org:liu-129174DiVA: diva2:936015
Note

Funding Agencies|Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

Available from: 2016-06-13 Created: 2016-06-13 Last updated: 2016-06-13

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Alnoor, HatimPozina, GaliaKhranovskyy, VolodymyrLiu, XianjieIandolo, DonataWillander, MagnusNur, Omer
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Department of Science and TechnologyFaculty of Science & EngineeringThin Film PhysicsSemiconductor MaterialsSurface Physics and ChemistryPhysics and Electronics
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Journal of Applied Physics
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